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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA757
DESCRIPTION *With TO-3 package *Complement to type 2SC897 APPLICATIONS *For audio amplifier power output applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -100 -6 -7 -12 60 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SA757
SYMBOL
MAX
UNIT
V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT
Collector-emitter breakdown voltage
IC=-50mA ;RBE=9 IC=-5mA ,IE=0 IE=-5mA ,IC=0 IC=-5A; IB=-1A IC=-1A ; VCE=-5V VCB=-30V; IE=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V
-100
V
Collector-base breakdown voltage
-120
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-1.8
V
Base-emitter on voltage
-1.5
V
Collector cut-off current
-1
mA
DC current gain
25
200
DC current gain
20
Transition frequency
24
MHz
hFE-1 Classifications A 25-60 B 50-120 C 100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA757
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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